Ranikhet Express - रेगिस्तान में हरियाली

Sir,
In very simple words IGBT has the advantages of both high current handling capability and ease of control which GTO don't have. In 3-Phase Locomotive both the Cabin of the Loco is considered as Bogie 1 & Bogie 2. In case of GTO based Loco if any Traction Motor is malfunctioning then you have to isolate the Bogie whose TM is damaged(TM is fixed with wheels of the Loco) and without repairing the same you can't proceed with the Loco. But in case of IGBT you need not wait for repairing you can proceed with the Loco with other Functional TMs and operating rules in IGBT is much more easier than GTO for the LPs of 3-Phase Loco.
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details are here: /faq/post/1875
GTO is a Thyristor whereas IGBT is a Transistor.
Transistor vs Thyristor
Both transistor and thyristor are semiconductor devices with alternating P type and N type semiconductor layers. They are used in many switching applications due to many reasons such as efficiency, low cost and small size. Both of them are three terminal devices, and they provide a good control range of current with a small controlling current. Both these devices have application dependant advantages.
Transistor
Transistor is made of three alternating semiconductor layers (Either P-N-P or N-P-N). This forms two PN junctions (a junction made by connecting a P type semiconductor and an N type semiconductor) and therefore, a unique type of behavior is observed. Three electrodes are connected to three semiconductor layers and middle terminal is called ‘base’. Other two layers are known as ‘emitter’ and ‘collector’.
In transistor, large collector to emitter (Ic) current is controlled by the small base emitter current (IB) and this property is exploited to design amplifiers or switches. In switching applications, the three layers of semiconductors act as a conductor when the base current is provided.
Thyristor
Thyristor is made of four alternating semiconductor layers (in the form of P-N-P-N) and therefore, consists of three PN junctions. In analysis, this is considered as a tightly coupled pair of transistors (one PNP and other in NPN configuration). The outermost P and N type semiconductor layers are called anode and cathode respectively. Electrode connected to inner P type semiconductor layer is known as the ‘gate’.
In operation, thyristor acts conducting when a pulse is provided to the gate. It has three modes of operation known as ‘reverse blocking mode’, ‘forward blocking mode’ and ‘forward conducting mode’. Once the gate is triggered with the pulse, thyristor goes to the ‘forward conducting mode’ and keep conducting until the forward current become less than the threshold ‘holding current’.
Thyristors are power devices and most of the times they are used in applications where high currents and voltages are involved. The most used thyristor application is controlling alternating currents.
Difference Between Transistor and Thyristor
1. Transistor has only three layers of semiconductor where thyristor has four layers of them.
2. Three terminals of transistor are known as emitter, collector and base where thyristor has terminals known as anode, cathode and gate
3. Thyristor is considered as tightly couple pair of transistors in analysis.
4. Thyristors can operate at higher voltages and currents than transistors.
5. Power handling is better for thyristors because their ratings are given in kilo watts and transistor power range is in watts.
6. Thyristor only requires a pulse to change the mode to conducting where transistor needs a continuous supply of the controlling current.
7. Internal power loss in transistor is higher than that of thyristor.
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A few points to note :-
1. Main advantage of IGBT over GTO is the switching frequency. The switching frequency of IGBT is about 3-4 times higher than that of GTO. Through higher switching frequencies, we can put tighter bounds on the stator flux. As a result, torque pulsations can be minimized.
2. GTO, being a thyristor, requires external snubber circuits as a result of which the switching losses are higher. IGBT does not require such snubber circuits because of di/dt and dv/dt control. Hence, the switching losses are considerably lower.
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GTO thyristors are bigger in size, as compared to IGBT. So, the resulting inverter from IGBT also will be smaller in size. Hence, it's possible to use one inverter for every traction motor, rather than using one inverter for a bogie (group of 2 or 3 motors). Hence, every axle can be separately controlled by the control system.
A typical advantage of axle control configuration is that it helps in improving wheel-rail adhesion independent of wheel diameter.